FQU1N80中文资料分立式 MOSFET数据手册ONSEMI规格书
FQU1N80规格书详情
描述 Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplied, active power factor correction (PFC), and electronic lamp balasts.
特性 Features
• 1.0A, 800V, RDS(on) = 20Ω (Max.) @ VGS = 10 V, ID = 0.5 A
• Low Gate Charge (Typ. 5.5 nC)
• Low Crss (Typ. 2.7 pF)
• 100% Avalanche Tested
应用 Application
• Switched Mode Power Supplies
• Active Power Factor Correction (PFC)
• Electronic Lamp Ballasts
技术参数
- 制造商编号
：FQU1N80
- 生产厂家
：ONSEMI
- Pb-free
：Pb
- Halide free
：H
- Status
：Active
- Channel Polarity
：N-Channel
- Configuration
：Single
- V(BR)DSS Min (V)
：800
- VGS Max (V)
：±30
- VGS(th) Max (V)
：5
- ID Max (A)
：1
- PD Max (W)
：45
- RDS(on) Max @ VGS = 2.5 V(mΩ)
：-
- RDS(on) Max @ VGS = 4.5 V(mΩ)
：-
- RDS(on) Max @ VGS = 10 V(mΩ)
：20000
- Qg Typ @ VGS = 4.5 V (nC)
：-
- Qg Typ @ VGS = 10 V (nC)
：5.5
- Ciss Typ (pF)
：150
- Package Type
：IPAK-3/DPAK-3 STRAIGHT LEAD
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
22+ |
I-PAKTO-251 |
18000 |
原装正品 |
询价 | ||
Fairchild |
23+ |
33500 |
询价 | ||||
仙童 |
06+ |
TO-251 |
5000 |
原装库存 |
询价 | ||
FS |
24+ |
原厂封装 |
65250 |
支持样品,原装现货,提供技术支持! |
询价 | ||
FAIRCHILD/仙童 |
24+ |
TO251 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
ON |
22+ |
6000 |
代理原装正品 |
询价 | |||
FAIRCHILD/仙童 |
2022+ |
TO-251 |
50000 |
原厂代理 终端免费提供样品 |
询价 | ||
harris |
16+ |
原厂封装 |
10000 |
全新原装正品,代理优势渠道供应,欢迎来电咨询 |
询价 | ||
FAIRCHILD |
24+ |
TO-251 |
15000 |
只做原装正品现货 欢迎来电查询15919825718 |
询价 | ||
ON/安森美 |
25+ |
SMD |
8880 |
原装认准芯泽盛世！ |
询价 |
