N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applica

文件：532.96 Kbytes 页数：5 Pages

FUJI

富士通

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=3A@ TC=25℃ · Drain Source Voltage -VDSS=600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.3 Ω(Max)@VGS= 10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：296.11 Kbytes 页数：2 Pages

ISC

无锡固电

功率MOSFET 600V-700V

FUJI

富士通

LightMOS Power Transistor

LightMOS Power Transistor • New high voltage technology designed for ZVS-switching in lamp ballasts • IGBT with integrated reverse diode • 4A current rating for reverse diode • Up to 10 times lower gate capacitance than MOSFET • Avalanche rated • 150°C operating temperature • FullPak is

文件：330.78 Kbytes 页数：15 Pages

INFINEON

英飞凌

LightMOS Power Transistor

LightMOS Power Transistor • New high voltage technology designed for ZVS-switching in lamp ballasts • IGBT with integrated reverse diode • 4A current rating for reverse diode • Up to 10 times lower gate capacitance than MOSFET • Avalanche rated • 150°C operating temperature • FullPak is

文件：330.78 Kbytes 页数：15 Pages

INFINEON

英飞凌

LightMOS Power Transistor

LightMOS Power Transistor • New high voltage technology designed for ZVS-switching in lamp ballasts • IGBT with integrated reverse diode • 4A current rating for reverse diode • Up to 10 times lower gate capacitance than MOSFET • Avalanche rated • 150°C operating temperature • FullPak is

文件：330.78 Kbytes 页数：15 Pages

INFINEON

英飞凌