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FMV

MAGNETIC SWITCHES

文件:235.15 Kbytes 页数:2 Pages

SHIELD

FMV03N60E

N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applica

文件:532.96 Kbytes 页数:5 Pages

Fuji

富士通

FMV05N50E

N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applica

文件:446.87 Kbytes 页数:5 Pages

Fuji

富士通

FMV05N60E

N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applicati

文件:547.01 Kbytes 页数:5 Pages

Fuji

富士通

FMV06N60E

N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applica

文件:529.48 Kbytes 页数:5 Pages

Fuji

富士通

FMV06N60ES

N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.7±0.5V) High avalanche durability Applica

文件:547.53 Kbytes 页数:5 Pages

Fuji

富士通

FMV06N90E

N-CHANNEL SILICON POWER MOSFET

Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High aval

文件:502.53 Kbytes 页数:5 Pages

Fuji

富士通

FMV07N50E

N-CHANNEL SILICON POWER MOSFET

Super FAP-E3 series Features • Maintains both low power loss and low noise • Lower RDS(on) characteristic • More controllable switching dv/dt by gate resistance • Smaller VGS ringing waveform during switching • Narrow band of the gate threshold voltage (3.0±0.5V) • High aval

文件:446.29 Kbytes 页数:5 Pages

Fuji

富士通

FMV08N50E

N-CHANNEL SILICON POWER MOSFET

Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High aval

文件:423.76 Kbytes 页数:5 Pages

Fuji

富士通

FMV09N90E

N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche durability Applications

文件:531.74 Kbytes 页数:5 Pages

Fuji

富士通

技术参数

  • Series:

    SuperFAP-E3

  • VDSS(V):

    800

  • ID(A):

    6

  • RDS(ON)(Ω):

    2

  • QG(nC):

    32

  • VGS(V):

    ±30

  • VGS(th)(V):

    4±0.5

  • Package:

    TO-220F(SLS)

  • ID(pulse)(A):

    24

  • PD(W):

    48

  • Ciss(pF):

    970

  • Crss(pF):

    7

  • Coss(pF):

    100

  • Trr(ns):

    1600

  • Net mass(g):

    1.7

供应商型号品牌批号封装库存备注价格
FUJI富士
TO-220F
3200
原装长期供货!
询价
FREQUENCYMAN
05+
原厂原装
4433
只做全新原装真实现货供应
询价
FUJI
2016+
TO-220F
3000
只做原装,假一罚十,公司可开17%增值税发票!
询价
原厂
23+
TO-220
5000
原装正品,假一罚十
询价
FUJI
17+
TO-220F
6200
询价
FUJI
25+
TO-220F
49
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
24+
TO-220F
5000
全现原装公司现货
询价
FujiSemiconductor
5
全新原装 货期两周
询价
恩XP
24+
SMD
39000
NXP一级代理商原装进口现货,假一赔十
询价
FUJI
23+
TO-220F
8560
受权代理!全新原装现货特价热卖!
询价
更多FMV供应商 更新时间2025-12-10 16:19:00