isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=16A@ TC=25℃ · Drain Source Voltage -VDSS=600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.47Ω(Max)@VGS= 10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：300.54 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=19A@ TC=25℃ · Drain Source Voltage -VDSS=600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.365Ω(Max)@VGS= 10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：295.84 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=19A@ TC=25℃ · Drain Source Voltage -VDSS=600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.365Ω(Max)@VGS= 10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：300.29 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=20A@ TC=25℃ · Drain Source Voltage -VDSS=500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.31Ω(Max)@VGS= 10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：295.34 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

• DESCRITION • UPS (Uninterruptible Power Supply) • Power conditioner system • Power supply • FEATURES • Low on-resistance: RDS(on) ≤ 0.19Ω (max) • Low switching loss • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：386.02 Kbytes 页数：2 Pages

ISC

无锡固电

rN-Channel enhancement mode power MOSFET

Features Low on-state resistance Low switching loss easy to use (more controllabe switching dV/dt by Rg) Applications UPS Server Telecom Power conditioner system Power supply

文件：345.35 Kbytes 页数：7 Pages

FUJI

富士通

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=22A@ TC=25℃ · Drain Source Voltage -VDSS=600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.16Ω(Max)@VGS= 10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：295.63 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=23A@ TC=25℃ · Drain Source Voltage -VDSS=500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.245Ω(Max)@VGS= 10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：295.62 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGSringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applications

文件：421.39 Kbytes 页数：5 Pages

FUJI

富士通

N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGSringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability Applications

文件：549.93 Kbytes 页数：5 Pages

FUJI

富士通