NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI FMB175 is Designed for Class C, FM Broadcast Applications up to 108 MHz. FEATURES: • Class C Operation • PG = 10 dB at 175 W/108 MHz • Omnigold™ Metalization System

文件：17.9 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

ASI Semiconductor

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power ​​​​​​​Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

文件：183.2 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power ​​​​​​​Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

文件：183.2 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

N-CHANNEL BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance

文件：138.89 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉