High Voltage Fast Switching NPN Power Transistor

Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies

文件：164.82 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

High-Voltage Fast-Switching NPN Power Transistor

Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch-Mode Power Supplies

文件：374.98 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO= 400V(Min.) ·High Reliability ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driv

文件：307.1 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：J3307D；Package：D-PAK；High-Voltage Fast-Switching NPN Power Transistor

Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch-Mode Power Supplies

文件：374.98 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

FJB3307D: High Voltage Fast Switching NPN Power Transistor

FJB3307D是一款700 V 8 A NPN硅外延平面晶体管。 FJB3307D设计用于高速开关应用，采用业界标准的表面贴装TO-263 (D2PAK)封装，提供设计灵活性以及出色的功耗性能。 高电压能力\n 高开关速度\n 宽安全工作范围\n 集电极和发射极之间内置二极管;

ONSEMI

安森美半导体

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：剪切带（CT）带盒（TB） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 400V 8A D2PAK

ONSEMI

安森美半导体