FIR7N65RG说明书PDF资料批发采购福斯特-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
FIR7N65RG	文件：300 bytes Page：1 Pages	场效应管 / 高压MOSFERs	First 福斯特	First
FQA7N65C	文件：722.05 Kbytes Page：8 Pages	650V N-Channel MOSFET These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. 文件：722.05 Kbytes 页数：8 Pages	Fairchild 仙童半导体	Fairchild
FQB7N65C	文件：723.41 Kbytes Page：8 Pages	650V N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand 文件：723.41 Kbytes 页数：8 Pages	Fairchild 仙童半导体	Fairchild
FQB7N65CTM	文件：723.41 Kbytes Page：8 Pages	650V N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand 文件：723.41 Kbytes 页数：8 Pages	Fairchild 仙童半导体	Fairchild

更多FIR7N65R供应商更新时间2025-11-4 14:02:00