FQB7N65C中文资料仙童半导体数据手册PDF规格书

描述 Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

特性 Features

• 7A, 650V, RDS(on) = 1.4Ω @VGS = 10 V

• Low gate charge ( typical 28 nC)

• Low Crss ( typical 12 pF)

• Fast switching

• 100 avalanche tested

• Improved dv/dt capability