FQB6N90中文资料仙童半导体数据手册PDF规格书

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switch mode power supplies.

特性 Features

• 5.8A, 900V, RDS(on) = 1.9Ω @VGS = 10 V

• Low gate charge ( typical 40 nC)

• Low Crss ( typical 17 pF)

• Fast switching

• 100 avalanche tested

• Improved dv/dt capability