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FQB7N65CTM中文资料仙童半导体数据手册PDF规格书
FQB7N65CTM规格书详情
描述 Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
特性 Features
• 7A, 650V, RDS(on) = 1.4Ω @VGS = 10 V
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 12 pF)
• Fast switching
• 100 avalanche tested
• Improved dv/dt capability
产品属性
- 型号：
FQB7N65CTM
- 功能描述：
MOSFET 650V 7A NCH MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
NA/ |
3750 |
原装现货,当天可交货,原型号开票 |
询价 | ||
FAIRCHILD/仙童 |
25+ |
TO263 |
500 |
原装正品,假一罚十! |
询价 | ||
FAIRCHI |
15+ |
TO-263 |
187 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
FAIRCHI |
21+ |
TO-263 |
952 |
原装现货假一赔十 |
询价 | ||
FAIRCHI |
2016+ |
TO-263 |
6528 |
房间原装进口现货假一赔十 |
询价 | ||
FAIR |
23+ |
原厂封装 |
11888 |
专做原装正品,假一罚百! |
询价 | ||
FSC |
25+23+ |
TO-263 |
15537 |
绝对原装正品全新进口深圳现货 |
询价 | ||
FAIRCILD |
22+ |
TO-263 |
8000 |
原装正品支持实单 |
询价 | ||
Fairchild |
24+ |
TO-263 |
7500 |
询价 | |||
onsemi(安森美) |
24+ |
TO-263 |
8357 |
支持大陆交货,美金交易。原装现货库存。 |
询价 |
