FGY75T95SQDT数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

Trench Field Stop 4th generation IGBT for High performance power conversion application. Specifically designed with low Eoff/Eon Operation for fast switching speed where switching loss loss is critical.

特性 Features

• Positive temperature coefficient
• Easy paralleling operation
• Maximum Junction temperature : TJ = 175 C
• Fast switching
• Tight parameter distribution

应用 Application

• I-NPC inverter
• T-NPC Inverter
• Solar inverter
• UPS

简介

FGY75T95SQDT属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的FGY75T95SQDT晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。