FGY60T120SQDN中文资料IGBT，超场截止 -1200V 60A数据手册ONSEMI规格书

描述 Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Ultra Field Stop Trench construction, and provides superior
performance in demanding switching applications, offering both low on
state voltage and minimal switching loss. The IGBT is well suited for
UPS and solar applications. Incorporated into the device is a soft and
fast co−packaged free wheeling diode with a low forward voltage.

特性 Features

• Extremely Efficient Trench with Ultra Field Stop Technology
• TJmax = 175°C
• Soft Fast Reverse Recovery Diode
• Optimized for High Speed Switching
• These are Pb−Free Devices

应用 Application

• Solar Inverter
• EV charging station
• Industrial

简介

FGY60T120SQDN属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的FGY60T120SQDN晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。