FGY100T65SCDT中文资料IGBT，场截止沟槽，短路额定值，650 V，100 A数据手册ONSEMI规格书

描述 Description

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar, UPS, motor control, ESS and HVAC applications where low conduction and switching losses are essential.

特性 Features

• Maximum Junction Temperature: TJ = 175°C
• Positive Temperature Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.5 V (Typ.) @ IC = 100 A
• High Input Impedance
• Fast Switching
• Short Circuit Rated 5 us
• Tighten Parameter Distribution
• These Devices are Pb−Free and are RoHS Compliant

应用 Application

• Solar
• UPS
• Motor Control
• ESS
• HVAC

简介

FGY100T65SCDT属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的FGY100T65SCDT晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。