丝印：FGY100T65SCDT；Package：TO-247H03；Field Stop Trench IGBT, Short Circuit Rated, 650V, 100A

文件：427.74 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Field-Stop Trench IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=1.5V@IC= 100A · High Speed Switching · High Current Capability APPLICATIONS · UPS · Motor Control · Solar Inverters · HVAC

文件：343 Kbytes 页数：2 Pages

ISC

无锡固电

IGBT，场截止沟槽，短路额定值，650 V，100 A

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar, UPS, motor control, ESS and HVAC applications where low conduction and switching losses are essential. • Maximum Junction Temperature: TJ = 175°C\n• Positive Temperature Co-efficient for Easy Parallel Operating\n• High Current Capability\n• Low Saturation Voltage: VCE(sat) = 1.5 V (Typ.) @ IC = 100 A\n• High Input Impedance\n• Fast Switching\n• Short Circuit Rated 5 us\n• Tighten Parameter Distributi;

ONSEMI

安森美半导体

Package：TO-247-3 变式；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：FS3TIGBT TO247 100A 650V

ONSEMI

安森美半导体