FGY75T95LQDT数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

Trench Field Stop 4th generation IGBT for High performance power conversion application. Specifically designed with Low Vcesat Operation for slow switching speed where low conduction loss is critical.

特性 Features

• Positive Temperature Co-efficient
• Easy Parallel Operation
• Maximum Junction Temperature : TJ = 175℃
• Low Saturation Voltage: VCE(Sat) = 1.31V (Typ.) @IC = 75A
• Tight Parameter Distribution

应用 Application

• I Type NPC Inverter
• T Type NPC inverter
• Solar inverter
• UPS

简介

FGY75T95LQDT属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的FGY75T95LQDT晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。