FGHL40S65UQ中文资料IGBT，650 V，40A，场截止沟槽数据手册ONSEMI规格书

描述 Description

Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation of RC IGBTs offer superior conduction, switching performance and easy parallel operation for consumer and industrial applications

特性 Features

• Maximum Junction Temperature:TJ = 175°C
• Low Saturation Voltage:VCE(sat) = 1.35 V ( Typ.) @ Ic = 40 A
• Positive Temperature Co-efficient for Easy Parallel Operating
• High Current Capability
• 100% of the Parts tested for ILM

• High Input Impedance
• Tighten Parameter Distribution
• RoHS Compliant
• Low Conduction Loss Design for Soft Switching Application
• IGBT with Monolithic Reverse Conducting Diode

应用 Application

• Soft Switching Application
• Inverterized micro wave oven

简介

FGHL40S65UQ属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的FGHL40S65UQ晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。