FGH75T65SQDNL4数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop IV Trench construction, and provides
superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO−247−4L package that provides significant reduction in Eon Losses compared to standard TO−247−3L package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free
wheeling diode with a low forward voltage.

特性 Features

• Extremely Efficient Trench with Field Stop Technology
• TJmax = 175°C
• Improved Gate Control Lowers Switching Losses
• Separate Emitter Drive Pin
• TO-247-4L for Minimal Eon Losses
• Optimized for High Speed Switching
• These are Pb-Free Devices

应用 Application

• Solar Inverter
• Uninterruptible Power Inverter Supplies
• Neutral Point Clamp Topology

简介

FGH75T65SQDNL4属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的FGH75T65SQDNL4晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。