600V, 80A Field Stop IGBT

General Description Using novel field stop IGBT technology, Fairchild®s field stop IGBTs offer the optimum performance for induction heating and PFC applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Coltage: VCE(sat) = 1.8

文件：650.63 Kbytes 页数：9 Pages

Fairchild

仙童半导体

IGBT，600V，场截止

飞兆半导体的场截止 IGBT 系列采用新型场截止 IGBT 技术，为感应加热和功率因数校正(PFC)等低导通损耗和开关损耗至关重要的应用提供了最佳性能。 •高电流能力\n•低饱和电压：VCE(sat) =1.8V @ IC = 40A\n•高输入阻抗\n•快速开关\n•符合 RoHS 标准;

ONSEMI

安森美半导体

600V, 80A Field Stop IGBT

General Description Using novel field stop IGBT technology, Fairchild®s field stop IGBTs offer the optimum performance for induction heating and PFC applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Coltage: VCE(sat) = 1.8

文件：650.63 Kbytes 页数：9 Pages

Fairchild

仙童半导体

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

Fairchild

仙童半导体

Package：TO-247-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 80A 290W TO247

ONSEMI

安森美半导体