IGBT，600V，20A，场截止

飞兆半导体的新型场截止第2代 IGBT 系列采用创新型场截止 IGBT 技术，为消费类电器、运动控制和家用电器等低导通和开关损耗至关重要的应用提供最佳性能。 •最大结温 TJ = 175°C\n•正温度系数，易于并联运行\n•高电流能力\n•低饱和电压： VCE(sat) = 1.7 V（典型值） @ IC = 20A\n•高输入阻抗\n•快速开关： EOFF =7uJ/A\n•紧密的参数分布\n•符合 RoHS 标准;

ONSEMI

安森美半导体

600 V, 20 A Field Stop IGBT

General Description Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. Features • Maximum Junction Temperatu

文件：960.45 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

Package：TO-3P-3 整包；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT FIELD STOP 600V 40A TO3PF

ONSEMI

安森美半导体

600V, 20A Field Stop IGBT

General Description Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Voltage: VCE(

文件：387.73 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

600V, 20A Field Stop IGBT

General Description Using novel field-stop IGBT technology, Fairchild’s new series of field-stop IGBTs offers the optimum performance for automotive chargers, inverters, and other applications where low conduction and switching losses are essential. Features • High current capability • Low sat

文件：433.75 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

600V, 20A Field Stop IGBT

General Description Using novel field stop IGBT technology, Fairchild®’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switch ing losses are essential. Features • High Current Capability • Low Saturation Voltage: VC

文件：796.47 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体