FF200R33KF2C中文资料IGBT模块数据手册Infineon规格书

描述 Description

IHV A 3300 V, 200 A 73 mm dual IGBT Module with IGBT2 and Emitter Controlled diode - The experienced solution for traction and industry applications.
Also available as 400A half bridge module: FF400R33KF2C

特性 Features

• High reliability and robust module construction

优势:
• High power density for compact inverter designs
• Standardized housing

简介

FF200R33KF2C属于分立半导体产品的晶体管-IGBT-模块。由制造生产的FF200R33KF2C晶体管 - IGBT - 模块绝缘栅双极晶体管 (IGBT) 是三端功率半导体器件，主要用作电子开关，兼具高效率和快速切换优点。作为模块，IGBT 配置为非对称式桥； 升压、降压和制动斩波器；全桥、三电平和三相逆变器。有些器件内置了用于监控温度的 NTC 热敏电阻。IGBT 模块可根据最大功率、集电极电流、集射击穿电压和配置进行区分。