FF200R12KT3数据手册分立半导体产品的晶体管-IGBT-模块规格书PDF

描述 Description

The half-bridge 62 mm 1200 V, 200 A dual switch IGBT modules with fast TRENCHSTOP™ IGBT3 and Emitter Controlled high efficiency diode is the right choice for your design. Also available as variation with common emitter: FF200R12KT3_E.

特性 Features

• Superior solution for frequency controlled inverter drives
• UL/CSA Certification with UL1557 E83336
• Operating temperature up to 125 °C (max 150 °C)
• Optimized switching characteristic like softness and reduced switching losses
• Existing packages with higher current capability
• RoHS compliant

优势:
• Flexibility
• Optimal electrical performance
• Highest reliability

简介

FF200R12KT3属于分立半导体产品的晶体管-IGBT-模块。由制造生产的FF200R12KT3晶体管 - IGBT - 模块绝缘栅双极晶体管 (IGBT) 是三端功率半导体器件，主要用作电子开关，兼具高效率和快速切换优点。作为模块，IGBT 配置为非对称式桥； 升压、降压和制动斩波器；全桥、三电平和三相逆变器。有些器件内置了用于监控温度的 NTC 热敏电阻。IGBT 模块可根据最大功率、集电极电流、集射击穿电压和配置进行区分。