FDS6912

Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

GeneralDescription TheseN-ChannelLogicLevelMOSFETshavebeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithc

FDS6912

丝印：FDS6912；Package：SO-8；Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

GeneralDescription TheseN-ChannelLogicLevelMOSFETshavebeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithc

FDS6912

双 N 沟道，逻辑电平，PWM 优化，PowerTrench® MOSFET，30V，6A，28mΩ; 6 A，30 V。 RDS(ON) = 0.028。 @ VGS = 10 V RDS(ON) = 0.042 。 @ VGS = 4.5 V。\n 优化用于切换使用脉宽调制(PWM)控制器的DC/DC转换器\n 极快速开关\n 低栅极电荷\n;

这些N沟道逻辑电平MOSFET经过专门设计，采用同步或常规开关PWM控制器提高DC/DC转换器的整体效率。 比其他具有可比RDS(ON)规格的MOSFET相比，这些MOSFET拥有更快的开关速度和更低的栅极电荷。 因此，这是一款更易于驱动且更安全（在高频段也是如此）的MOSFET，可实现具有更高总效率的DC/DC电源设计。

FDS6912

Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

FDS6912.

Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

GeneralDescription TheseN-ChannelLogicLevelMOSFETshavebeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithc

FDS6912A

Dual N-Channel, Logic Level, PowerTrenchTM MOSFET

GeneralDescription TheseN-ChannelLogicLevelMOSFETsareproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltagea

FDS6912A

丝印：FDS6912A；Package：SOP-8；30V Dual N-Channel MOSFET

Features •Fastswitchingspeed •Lowgatecharge •Highperformancetrenchtechnologyforextremely lowRDS(ON) •Highpowerandcurrenthandlingcapability (VGS=10V) VDS(V)=30V ID=6A RDS(ON)

FDS6912A

丝印：FDS6912A；Package：SO-8；Dual N-Channel Logic Level PowerTrenchÒ MOSFET

GeneralDescription TheseN-ChannelLogicLevelMOSFETsareproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltagea

FDS6912A

双 N 沟道，逻辑电平，PowerTrench® MOSFET，30V，6A，28mΩ; •6 A，30 V\n•RDS(ON) = 28 mΩ @ VGS = 10 V\n•RDS(ON) = 35 mΩ @ VGS = 4.5 V\n•快速开关速度\n•低栅极电荷\n•高性能沟道技术可实现极低的RDS(on)\n•高功率和高电流处理能力\n;

这些N沟道逻辑电平MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。 这些器件非常适合需要线路内低功率损耗和快速开关的低电压和电池供电应用。

FDS6912_0007

Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET