丝印：FDS6912；Package：SO-8；Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

General Description These N-Channel Logic Level MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with c

文件：176.41 Kbytes 页数：7 Pages

ONSEMI

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Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

General Description These N-Channel Logic Level MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with c

文件：219.88 Kbytes 页数：8 Pages

Fairchild

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Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

文件：76.47 Kbytes 页数：5 Pages

Fairchild

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丝印：FDS6912A；Package：SO-8；Dual N-Channel Logic Level PowerTrenchÒ MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a

文件：224.24 Kbytes 页数：7 Pages

ONSEMI

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丝印：FDS6912A；Package：SOP-8；30V Dual N-Channel MOSFET

Features • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS(ON) • High power and current handling capability (VGS = 10V) VDS (V) = 30V ID = 6A RDS(ON)

文件：387.35 Kbytes 页数：6 Pages

UMW

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双 N 沟道，逻辑电平，PWM 优化，PowerTrench® MOSFET，30V，6A，28mΩ

这些N沟道逻辑电平MOSFET经过专门设计，采用同步或常规开关PWM控制器提高DC/DC转换器的整体效率。 比其他具有可比RDS(ON)规格的MOSFET相比，这些MOSFET拥有更快的开关速度和更低的栅极电荷。 因此，这是一款更易于驱动且更安全（在高频段也是如此）的MOSFET，可实现具有更高总效率的DC/DC电源设计。 6 A，30 V。 RDS(ON) = 0.028。 @ VGS = 10 V RDS(ON) = 0.042 。 @ VGS = 4.5 V。\n 优化用于切换使用脉宽调制(PWM)控制器的DC/DC转换器\n 极快速开关\n 低栅极电荷;

ONSEMI

安森美半导体

Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

General Description These N-Channel Logic Level MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with c

文件：176.41 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Dual N-Channel, Logic Level, PowerTrenchTM MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a

文件：222.94 Kbytes 页数：4 Pages

Fairchild

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Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

文件：76.47 Kbytes 页数：5 Pages

Fairchild

仙童半导体

Dual N-Channel Logic Level PowerTrench MOSFET

文件：121.37 Kbytes 页数：5 Pages

Fairchild

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