FDS6912中文资料仙童半导体数据手册PDF规格书
FDS6912规格书详情
General Description
These N-Channel Logic Level MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features
• 6 A, 30 V. RDS(ON) = 0.028 Ω @ VGS = 10 V
RDS(ON) = 0.042 Ω @ VGS = 4.5 V.
• Optimized for use in switching DC/DC converters with PWM controllers
• Very fast switching.
• Low gate charge
产品属性
- 型号：
FDS6912
- 功能描述：
MOSFET SO-8 DUAL N-CH 30V
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
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24+ |
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24+ |
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5000 |
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询价 |
