isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =14A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.49Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：332.18 Kbytes 页数：2 Pages

ISC

无锡固电

Insulated Gate Bipolar Transistor

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on)

文件：125.43 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

SHORT CIRCUIT RATED LOW ON-VOLTAGE

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on)

文件：121.76 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 6

文件：154 Kbytes 页数：6 Pages

ONSEMI

安森美半导体