P-Channel 2.5V Specified PowerTrench MOSFET

General Description This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage(2.5V – 12V). Features • –20 V, –2.4 A. Rds(on)= 0.055 Ω@

文件：103.44 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

P-Channel 2.5V Specified PowerTrench® MOSFET

General Description\nThis P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management\napplications with a wide range of gate drive voltage(2.5V – 12V). • –20 V, –2.4 A. Rds(on)= 0.055 Ω@ Vgs= –4.5 V\nRds(on)= 0.080 Ω@ Vgs= –2.5 V\n•Fast switching speed\n•High performance trench technology for extremely low Rds(on)\n•SuperSOT -3 provides low Rds(on) and 30% higher power handling capability than SOT23 in the same footprint;

ONSEMI

安森美半导体

丝印：302；Package：SOT-23；P-Channel 2.5 V (D-S) MOSFET

Features • –20 V, –2.4 A. RDS(ON) = 55m Ω @ VGS = –4.5 V RDS(ON) = 80 mΩ @ VGS = –2.5 V • Fast switching speed • High performance trench technology for extremely low RDS(ON) • SuperSOTTM -3 provides low RDS(ON) and 30 higher power handling capability than SOT23 in the same footprint

文件：309.77 Kbytes 页数：5 Pages

UMW

友台半导体

丝印：302D；Package：SOT23；P-Channel Enhancement-Mode MOS FETs

Product Summary Vps = -20V,Ip = -3A Rosion)

文件：12.00579 Mbytes 页数：6 Pages

TECHPUBLIC

台舟电子

丝印：302；Package：SOT-23；P-Channel 2.5 V (D-S) MOSFET

General Description This P-Channel 2.5V has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Applications • Power management • Load switch • Battery protection Features • –20 V, –2.4 A. RDS(ON) = 55m Ω @ VGS = –4.5 V RDS(ON) =

文件：295.31 Kbytes 页数：5 Pages

EVVOSEMI

翊欧

P-Channel 2.5V Specified PowerTrench MOSFET

General Description This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage(2.5V – 12V). Features • –20 V, –2.4 A. Rds(on)= 0.055 Ω@

文件：103.44 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

Contains all support circuitry needed for the ADS1148/ADS1248

文件：1.83652 Mbytes 页数：34 Pages

TI

德州仪器

Contains all support circuitry needed for the ADS1146/ADS1246

文件：2.33022 Mbytes 页数：27 Pages

TI

德州仪器

P-Channel 20-V (D-S) MOSFET

文件：1.04078 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

P 沟道 2.5V 指定 PowerTrench® MOSFET -20V，-2.4A，55mΩ

此P沟道2.5V额定MOSFET采用稳固栅极版本的飞兆先进的PowerTrench工艺生产。 它已针对栅极驱动电压范围(2.5V – 12V)广泛的电源管理应用进行了优化。 •–20 A，–2.4 V。\n•RDS(ON) = 0.055 mΩ @ VGS = –4.5 V\n•RDS(ON) = 0.080 mΩ @ VGS = –2.5 V\n•快速开关速度\n•高性能沟道技术可实现极低的RDS(ON)\n•SuperSOT™-3提供低RDS(ON)，并且在同样的尺寸下，功率处理能力比SOT23高出30%;

ONSEMI

安森美半导体