P-Channel Power Trench짰 MOSFET -30V, -18A, 20.0m廓

General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers

文件：375.26 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

-30V P-Channel Power Trench® MOSFET

这一P沟道MOSFET器件采用飞兆半导体的高级PowerTrench®工艺生产，该工艺专为最大限度地降低通态电阻而量身定制。 该器件非常适用于笔记本电脑和便携式电池组中的功率管理和负载开关应用。 •Max rDS(on) = 20.0mΩ（在VGS= -10V, ID = -8.5A时）\n•在VGS = -4.5V，ID = -6.3A时，最大值rDS(on) = 37.0 mΩ\n•扩展了VGSS范围(-25V)，适合电池应用\n•rDS(on)极低的高性能沟道技术\n•高功率和高电流处理能力\n•HBM ESD保护等级7kV典型值>\n•100%经过UIL测试\n•终端是符合RoHS标准的无铅产品;

ONSEMI

安森美半导体

P-Channel PowerTrench짰 MOSFET -30 V, -18 A, 20 m廓

General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers

文件：266.29 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

P-Channel Logic Level PowerTrench?줞OSFET

General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features • –9 A, –30 V. RDS(ON) = 0.017 Ω @ VGS =

文件：264.93 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

P-Channel Logic Level PowerTrenchTM MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features • –8.8 A, –30 V RDS(ON) = 20 mW @ VGS

文件：637.39 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司