首页 >FDMC4435BZ>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
FDMC4435BZ | P-Channel Power Trench짰 MOSFET -30V, -18A, 20.0m廓 GeneralDescription ThisP-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrench®processthathasbeenespeciallytailoredtominimizetheon-stateresistance.ThisdeviceiswellsuitedforPowerManagementandloadswitchingapplicationscommoninNotebookComputers | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
P-ChannelPowerTrench짰MOSFET-30V,-18A,20m廓 GeneralDescription ThisP-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrench®processthathasbeenespeciallytailoredtominimizetheon-stateresistance.ThisdeviceiswellsuitedforPowerManagementandloadswitchingapplicationscommoninNotebookComputers | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
30VP-ChannelPowerTrenchMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
P-ChannelLogicLevelPowerTrench?줞OSFET GeneralDescription ThisP-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features •–9A,–30V.RDS(ON)=0.017Ω@VGS= | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
P-ChannelLogicLevelPowerTrenchTMMOSFET GeneralDescription ThisP-ChannelMOSFETisaruggedgateversionofFairchildSemiconductor’sadvancedPowerTrenchprocess.Ithasbeenoptimizedforpowermanagementapplicationsrequiringawiderangeofgavedrivevoltageratings(4.5V–25V). Features •–8.8A,–30VRDS(ON)=20mW@VGS | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
-30VP-ChannelMOSFET GeneralDescription ThisdeviceiswellsuitedforPowerManagementandload switchingapplicationscommoninNotebookComputersand PortableBatteryPacks. Features VDS(V)=-30V ID=-8.8A(VGS=-10V) RDS(ON) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | EVVOSEMI | ||
P-ChannelLogicLevelPowerTrench?줞OSFET GeneralDescription ThisP-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features •–9A,–30V.RDS(ON)=0.017Ω@VGS= | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
P-ChannelLogicLevelPowerTrenchMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
P-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
30VoltP-ChannelPowerTrenchMOSFET GeneralDescription ThisP-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrench®processthathasbeenespeciallytailoredtominimizetheon-stateresistance. ThisdeviceiswellsuitedforPowerManagementandloadswitchingapplicationscommoninNotebookComputers | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
详细参数
- 型号:
FDMC4435BZ
- 功能描述:
MOSFET -30V P-Channel PowerTrench
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
onsemi |
24+ |
8-MLP(3.3x3.3) |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
FAIRCHILD/仙童 |
23+ |
DFN |
69000 |
全新原装现货热卖/代理品牌/可申请样品和规格书 |
询价 | ||
2020+ |
9500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||||
ON/安森美 |
24+ |
QFN8 |
136050 |
原装现货/15年行业经验欢迎询价 |
询价 | ||
ON |
21+ |
POWER33 |
6000 |
全新原装公司现货
|
询价 | ||
FAIRCHILD/仙童 |
24+ |
QFN8 |
4000 |
只做原厂渠道 可追溯货源 |
询价 | ||
FAIRCHILD/仙童 |
21+ |
QFN8 |
9800 |
只做原装正品假一赔十!正规渠道订货! |
询价 | ||
ON |
23+ |
POWER33 |
6000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ON/安森美 |
22+ |
QFN8 |
30000 |
原装正品 |
询价 | ||
ON/安森美 |
20+ |
WDFN83.3x3.3 |
120000 |
原装正品 可含税交易 |
询价 |
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