首页>FDMC4435BZ>规格书详情
FDMC4435BZ中文资料仙童半导体数据手册PDF规格书
FDMC4435BZ规格书详情
General Description
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
特性 Features
■ Max rDS(on) = 20 m at VGS = -10 V, ID = -8.5 A
■ Max rDS(on) = 37 m at VGS = -4.5 V, ID = -6.3 A
■ Extended VGSS range (-25 V) for battery applications
■ High performance trench technology for extremely low rDS(on)
■ High power and current handling capability
■ HBM ESD protection level >7 kV typical (Note 4)
■ 100 UIL Tested
■ Termination is Lead-free and RoHS Compliant
Applications
■ High side in DC - DC Buck Converters
■ Notebook battery power management
■ Load switch in Notebook
产品属性
- 型号：
FDMC4435BZ
- 功能描述：
MOSFET -30V P-Channel PowerTrench
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
24+ |
NA |
10000 |
询价 | |||
ON/安森美 |
24+ |
MLP-8 |
30000 |
原装正品公司现货,假一赔十! |
询价 | ||
FairchildSemiconductor |
24+ |
NA |
3000 |
进口原装正品优势供应 |
询价 | ||
24+ |
N/A |
62000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
鑫远鹏 |
25+ |
NA |
5000 |
价优秒回原装现货 |
询价 | ||
FAIRCHILD |
24+ |
QFN |
63200 |
一级代理/放心采购 |
询价 | ||
ON |
21+ |
POWER33 |
6000 |
全新原装公司现货
|
询价 | ||
FAIRCHILD/仙童 |
23+ |
QFN8 |
35680 |
只做进口原装QQ:373621633 |
询价 | ||
ON/安森美 |
20+ |
WDFN83.3x3.3 |
120000 |
原装正品 可含税交易 |
询价 | ||
ON/安森美 |
25+ |
SMD |
8880 |
原装认准芯泽盛世！ |
询价 |
