60V P-Channel PowerTrench MOSFET

General Description This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Applications Features • –15 A, –60 V. RDS(ON)= 100 mΩ@ VGS= –10 V RDS(ON)= 130 mΩ@ VGS= –4.5 V • Fast swi

文件：81.67 Kbytes 页数：6 Pages

Fairchild

仙童半导体

丝印：FDD5614P；60V P-Channel PowerTrench MOSFET

General Description This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Applications • DC/DC converter • Power management • Load switch Features • –15 A, –60 V. RDS(ON) = 100 mΩ @ VGS = –10 V RDS(ON) = 130

文件：353.21 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

60V P-Channel PowerTrench® MOSFET

General Description\nThis 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Applications • –15 A, –60 V.  RDS(ON)= 100 mΩ@ VGS= –10 V\n                     RDS(ON)= 130 mΩ@ VGS= –4.5 V\n• Fast switching speed\n• High performance trench technology for extremely low RDS(ON)\n• High power and current handling capability;

ONSEMI

安森美半导体

60V P-Channel PowerTrench MOSFET

General Description This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Applications Features • –15 A, –60 V. RDS(ON)= 100 mΩ@ VGS= –10 V RDS(ON)= 130 mΩ@ VGS= –4.5 V • Fast swi

文件：81.67 Kbytes 页数：6 Pages

Fairchild

仙童半导体

P-channel Enhancement Mode Power MOSFET

Features  VDS= -60V, ID= -20A RDS(ON)

文件：912.24 Kbytes 页数：4 Pages

Bychip

百域芯

丝印：DPAK；Package：TO-252；isc P-Channel MOSFET Transistor

文件：310.15 Kbytes 页数：2 Pages

ISC

无锡固电

P-Channel 60-V (D-S) MOSFET

文件：990.06 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

60V P-Channel PowerTrench짰 MOSFET

文件：106.43 Kbytes 页数：6 Pages

Fairchild

仙童半导体

60V P-Channel PowerTrench짰 MOSFET

文件：106.43 Kbytes 页数：6 Pages

Fairchild

仙童半导体

60V，P 沟道，PowerTrench® MOSFET，-15A，100mΩ

该60V P沟道MOSFET采用飞兆高压PowerTrench工艺制成。 已针对电源管理应用进行了优化。 •–15 A, –60 V. \n•RDS(ON) = 100 mΩ （VGS = –10 V 时）\n•RDS(ON) = 130 mΩ （VGS = –4.5 V 时）\n•快速开关速度\n•高性能沟道技术可实现极低 RDS(ON)\n•高功率和高电流处理能力;

ONSEMI

安森美半导体