isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=110A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.8mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：331.18 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Power Trench짰 MOSFET 40V, 110A, 1.8m廓

Features ■ Typ rDS(on) = 1.31mΩ at VGS = 10V, ID = 80A ■ Typ Qg(tot) = 107nC at VGS = 10V, ID = 80A ■ UIS Capability ■ RoHS Compliant ■ Qualified to AEC Q101 Applications ■ Automotive Engine Control ■ Powertrain Management ■ Solenoid and Motor Drivers ■ Electronic Steering ■ Integrated

文件：400.12 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=110A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.8mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：331.57 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Logic Level PowerTrench MOSFET

文件：512.89 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

N 沟道，PowerTrench® MOSFET，40 V，110 A，1.8 mΩ

N-Channel PowerTrench® MOSFET, 40 V, 110 A, 1.8 mΩ •典型 rDS(on) = 1.31 mΩ（VGS = 10 V、ID = 80 A）\n•典型 Qg(tot) = 107 nC（VGS = 10 V、ID = 80 A）\n•UIS 能力\n•符合 RoHS 标准\n•符合 AEC Q101;

ONSEMI

安森美半导体

N 沟道，逻辑电平，PowerTrench® MOSFET，40 V，110 A，1.5 mΩ

N-Channel Logic Level PowerTrench® MOSFET, 40 V, 110 A, 1.5 mΩ • Typical RDS(on) = 1.2 mΩ at VGS = 10 V, ID = 80 A\n• Typical Qg(tot) = 121 nC at VGS = 10 V, ID = 80 A\n• UIS Capability\n• RoHS Compliant\n• Qualified to AEC Q101;

ONSEMI

安森美半导体