FDB9406L

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=110A@TC=25℃ ·DrainSourceVoltage :VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.8mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

FDB9406L_F085

N 沟道，逻辑电平，PowerTrench® MOSFET，40 V，110 A，1.5 mΩ; • Typical RDS(on) = 1.2 mΩ at VGS = 10 V, ID = 80 A\n• Typical Qg(tot) = 121 nC at VGS = 10 V, ID = 80 A\n• UIS Capability\n• RoHS Compliant\n• Qualified to AEC Q101\n;

N-Channel Logic Level PowerTrench® MOSFET, 40 V, 110 A, 1.5 mΩ

FDB9406L_F085

N-Channel Logic Level PowerTrench MOSFET

FDI9406

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.7mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmod

GSC9406

N-CHANNELENHANCEMENTMODEPOWERMOSFET

K9406BLU

ingressprotected

LF9406

SpecificationforaBandpassLCFilter

M9406A

PXIeOpticalExtendersforInstrumentation

MAX9406

LevelShifterof5Vto3.3VfortheHot-PlugDetection(HPD)Pin

MAX9406

DisplayPorttoDVI/HDMILevelShifter