isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=110A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.8mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：331.57 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Logic Level PowerTrench MOSFET

文件：512.89 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

N 沟道，逻辑电平，PowerTrench® MOSFET，40 V，110 A，1.5 mΩ

N-Channel Logic Level PowerTrench® MOSFET, 40 V, 110 A, 1.5 mΩ • Typical RDS(on) = 1.2 mΩ at VGS = 10 V, ID = 80 A\n• Typical Qg(tot) = 121 nC at VGS = 10 V, ID = 80 A\n• UIS Capability\n• RoHS Compliant\n• Qualified to AEC Q101;

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=80A@ TC=25℃ ·Drain Source Voltage- : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.7mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mod

文件：325.76 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：282.49 Kbytes 页数：4 Pages

GTM

勤益投资控股

ingress protected

文件：3.28167 Mbytes 页数：16 Pages

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