isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=93A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =5.7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：332.01 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Power Trench짰 MOSFET 40V, 110A, 1.2m廓

文件：490.88 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：FDB9403L；Package：D2-PAK；N-Channel Logic Level PowerTrench짰 MOSFET

文件：537.02 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=110A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.2mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：331.21 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Power Trench짰 MOSFET 40V, 110A, 1.2m廓

文件：484.65 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N 沟道，Power Trench® MOSFET，40V，110A，1.2mΩ

N-Channel Power Trench® MOSFET, 40V, 110A, 1.2mΩ •典型 rDS(on) = 1 mΩ（VGS = 10 V、ID = 80 A）\n•典型 Qg(tot) = 164 nC（VGS = 10 V、ID = 80 A）\n•UIS 能力\n•符合 RoHS 标准\n•符合 AEC Q101;

ONSEMI

安森美半导体

N 沟道，逻辑电平，PowerTrench® MOSFET，40 V，110 A，1.2 mΩ

N-Channel Logic Level PowerTrench® MOSFET, 40 V, 110 A, 1.2 mΩ • 典型 RDS(on) = 1.0 mΩ（VGS = 10 V、ID = 80 A）\n• 典型 Qg(tot) = 186 nC（VGS = 10 V、ID = 80 A）\n• UIS 能力\n• 符合 RoHS 标准\n• 符合 AEC Q101 标准;

ONSEMI

安森美半导体

MOSFET N-CH 40V 110A TO263AB

ONSEMI

安森美半导体