FDB1D7N10CL7

功率 MOSFET，N 沟道，Standard Gate，100 V，268 A，1.7 mΩ; • Low Qrr\n• Miniuze switching loss\n• Soft recovery body diode\n• Reduced EMI and voltage spike\n• Low RDS(on)\n• Minimize conduction loss\n• Small Footprint (5 x 6 mm)\n• Compact design\n• RoHS compliant\n;

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

FDB1D7N10CL7

丝印：FDB1D7N10CL7；Package：D2-PAK-7L；N-Channel Shielded Gate POWERTRENCH MOSFET

FDB33N25TM

FAIRCHILD/仙童
TO-263

FAIRCHILD/仙童

FDB8443

FAIRCHILD
TO263

FDBL0630N150

ON
PSOF-8L

ON