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首页>FDB1D7N10CL7>芯片详情
FDB1D7N10CL7_ONSEMI/安森美半导体_N-Channel Shielded Gate POWERTRENCH MOSFET柒号芯城
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产品属性
- 类型
描述
- 型号
:FDB1D7N10CL7
- Pb-free
:Pb
- Halide free
:H
- Status
:Active
- Channel Polarity
:N-Channel
- Configuration
:Single
- V(BR)DSS Min (V)
:100
- VGS Max (V)
:±20
- VGS(th) Max (V)
:4
- ID Max (A)
:268
- PD Max (W)
:250
- RDS(on) Max @ VGS = 2.5 V(mΩ)
:-
- RDS(on) Max @ VGS = 4.5 V(mΩ)
:-
- RDS(on) Max @ VGS = 10 V(mΩ)
:1.75
- Qg Typ @ VGS = 4.5 V (nC)
:-
- Qg Typ @ VGS = 10 V (nC)
:116
- Ciss Typ (pF)
:8285
- Package Type
:D2PAK-7/TO-263-7
供应商
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