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GC11N60K

PowerFactorCorrection(PFC)

Description TheGC11N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GC11N60K

PowerFactorCorrection

Description TheGC11N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GC11N60T

PowerFactorCorrection

Description TheGC11N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GC11N60T

PowerFactorCorrection(PFC)

Description TheGC11N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

HFF11N60S

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergy

HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

华汕电子器件汕头华汕电子器件有限公司

HMS11N60I

600VN-ChannelMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMS11N60K

600VN-ChannelMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

ISPP11N60CFD

N-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.44Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISPW11N60CFD

iscN-ChannelMOSFETTransistor

•DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤440mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFH11N60

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

技术参数

  • Pb-free:

    Pb

  • Status:

    Active

  • Channel Polarity:

    N-Channel

  • Configuration:

    Single

  • V(BR)DSS Min (V):

    600

  • VGS Max (V):

    5

  • VGS(th) Max (V):

    5

  • ID Max (A):

    11

  • PD Max (W):

    36

  • RDS(on) Max @ VGS = 10 V(mΩ):

    380

  • Qg Typ @ VGS = 10 V (nC):

    40

  • Ciss Typ (pF):

    1148

  • Package Type:

    TO-220-3 FullPak

供应商型号品牌批号封装库存备注价格
FAIRCHILD/仙童
24+
TO220F
8950
BOM配单专家,发货快,价格低
询价
ON/安森美
24+
TO220F
22048
原厂可订货,技术支持,直接渠道。可签保供合同
询价
ON/安森美
SMD
23+
6000
专业配单原装正品假一罚十
询价
FSC进口原
17+
TO-220F
6200
询价
FAIRCHIL
23+
TO220
9526
询价
24+
8866
询价
Fairchi
2016+
TO-220F
6528
房间原装进口现货假一赔十
询价
FSC进口原
24+
TO-220F
5000
全现原装公司现货
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FAIRCHILD
25+23+
TO220F
8791
绝对原装正品全新进口深圳现货
询价
更多FCPF11N60F供应商 更新时间2025-7-29 16:36:00