丝印：FCH060N80；Package：TO-247-3LD；MOSFET ??N-Channel, SUPERFET II 800 V, 58 A, 60 m

Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide super

文件：496.41 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：FCH060N80；Package：TO-247-3LD；MOSFET ??N-Channel, SUPERFET II 800 V, 58 A, 60 m

Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide super

文件：496.41 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

MOSFET ??N-Channel, SUPERFET II 800 V, 58 A, 60 m

Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide super

文件：496.41 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 58A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 60mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：372.25 Kbytes 页数：2 Pages

ISC

无锡固电