丝印：FCH47N60；Package：TO-247-3LD；MOSFET ??N-Channel 600 V, 47 A, 79 m

Description SUPERFET® is ON Semiconductor’s proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance mechanism for outstanding low on−resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide s

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ONSEMI

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丝印：FCH47N60；Package：TO-247-3LD；MOSFET ??N-Channel 600 V, 47 A, 79 m

Description SUPERFET® is ON Semiconductor’s proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance mechanism for outstanding low on−resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide s

文件：668.55 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

600V N-Channel MOSFET

Description SuperFET™ is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provid

文件：664.87 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 47A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 70mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：371.73 Kbytes 页数：2 Pages

ISC

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 47A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 73mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：341.69 Kbytes 页数：3 Pages

ISC

无锡固电

600V N-Channel MOSFET

Description SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on resistance and lower gate charge performance.This technology is tailored to minimize conduction loss, pr

文件：996.96 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MOSFET – N-Channel

Features • Typical rDS(on) = 66 m at VGS = 10 V, ID = 47 A • Typical Qg(tot) = 190 nC at VGS = 10 V, ID = 47 A • UIS Capability • Qualified to AEC Q101 and PPAP Capable • This Device is Pb−Free and is RoHS Compliant Applications • Automotive On Board Charger • Automotive DC/DC Converter

文件：672.04 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 47A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 62mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：372.25 Kbytes 页数：2 Pages

ISC

无锡固电