600V N-Channel MOSFET

Description SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on resistance and lower gate charge performance.This technology is tailored to minimize conduction loss, pr

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FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 47A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 73mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

无锡固电

600V N-Channel MOSFET

文件：978.12 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

N-Channel SuperFET FRFET MOSFET

文件：290.4 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

MOSFET – N-Channel

Features • Typical rDS(on) = 66 m at VGS = 10 V, ID = 47 A • Typical Qg(tot) = 190 nC at VGS = 10 V, ID = 47 A • UIS Capability • Qualified to AEC Q101 and PPAP Capable • This Device is Pb−Free and is RoHS Compliant Applications • Automotive On Board Charger • Automotive DC/DC Converter

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ONSEMI

安森美半导体

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

FAIRCHILD

仙童半导体

600V N-Channel MOSFET

文件：978.12 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

N-Channel SuperFET FRFET MOSFET

文件：290.4 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

N-Channel MOSFET

文件：388.34 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

Fast Recovery Type ( trr = 240ns)

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