FCH060N80中文资料安森美半导体数据手册PDF规格书

厂商型号	FCH060N80
功能描述	MOSFET ??N-Channel, SUPERFET II 800 V, 58 A, 60 m
文件大小	496.41 Kbytes
页面数量	10 页
生产厂商	ONSEMI
中文名称	安森美半导体
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-10-28 23:00:00
人工找货	FCH060N80价格和库存，欢迎联系客服免费人工找货

描述 Description

SUPERFET II MOSFET is ON Semiconductor’s brand−new high

voltage super−junction (SJ) MOSFET family that is utilizing charge

balance technology for outstanding low on−resistance and lower gate

charge performance. This technology is tailored to minimize

conduction loss, provide superior switching performance, dv/dt rate

and higher avalanche energy. Consequently, SUPERFET II MOSFET

is very suitable for the switching power applications such as PFC,

server/telecom power, FPD TV power, ATX power and industrial

power applications.

特性 Features

• Typ. RDS(on) = 54 m

• 850 V @ TJ = 150°C

• Ultra Low Gate Charge (Typ. Qg = 270 nC)

• Low EOSS (Typ. 23 J @ 400 V)

• Low Effective Output Capacitance (Typ. Coss(eff.) = 981 pF)

• 100 Avalanche Tested

• This Device is RoHS Compliant

Applications

• AC−DC Power Supply

• LED Lighting