FCD

Insulated safety terminals

FCD1300N80Z

N-Channel SuperFET II MOSFET

Description SuperFET®IIMOSFETisFairchildSemiconductor’sbrand-newhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thistechnologyistailoredtominimizeconductionloss,provides

FCD1300N80Z

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=4A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

FCD2004K

Plastic-Encapsulate MOSFETS

DESCRIPTION DS(ON) TheFCD2004KusesadvancedtrenchtechnologytoprovideexcellentRandlowgatecharge. ItisESDprotected. Thisdeviceissuitableforuseasauni-directionalorbi-directionalloadswitch,facilitatedbyitscommon-drainconfiguration.

FCD2005K

Plastic-Encapsulate MOSFETS

DESCRIPTION TheFCD2005KusesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge. ItisESDprotected. Thisdeviceissuitableforuseasauni-directionalorbi-directionalloadswitch,facilitatedbyitscommon-drainconfiguration.

FCD2007K

Plastic-Encapsulate MOSFETS

DESCRIPTION TheFCD2007KusesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge. ItisESDprotected. Thisdeviceissuitableforuseasauni-directionalorbi-directionalloadswitch,facilitatedbyitscommon-drainconfiguration.

FCD3400N80Z

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=2A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

FCD360N65S3R0

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

FCD360N65S3R0

Marking：FCD360N65S3R0；Package：TO-252；MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 10 A, 360 m

Description SUPERFETIIIMOSFETisONSemiconductor’sbrand−newhigh voltagesuper-junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon−resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pro

FCD380N60E

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.38Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D