Insulated safety terminals

文件：269.43 Kbytes 页数：5 Pages

TEC

泰科电子

丝印：FCD360N65S3R0；Package：TO-252；MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 10 A, 360 m

Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pro

文件：429.67 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：FCD600N65S3R0；Package：D-PAK；MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 6 A, 600 m

Description SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pro

文件：416.38 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：FCD260N65S3；Package：D-PAK；MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive

文件：416.68 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 4A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.3Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：353.25 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel SuperFET II MOSFET

Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide s

文件：887.74 Kbytes 页数：10 Pages

Fairchild

仙童半导体

Plastic-Encapsulate MOSFETS

DESCRIPTION DS(ON) The FCD2004K uses advanced trench technology to provide excellent R and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration.

文件：399.9 Kbytes 页数：5 Pages

GWSEMI

唯圣电子

Plastic-Encapsulate MOSFETS

DESCRIPTION The FCD2005K uses advanced trench technology to provide excellent R D S ( O N ) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration.

文件：368.35 Kbytes 页数：5 Pages

GWSEMI

唯圣电子

Plastic-Encapsulate MOSFETS

DESCRIPTION The FCD2007K uses advanced trench technology to provide excellent R D S ( O N ) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration.

文件：383.04 Kbytes 页数：5 Pages

GWSEMI

唯圣电子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 2A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：353.8 Kbytes 页数：2 Pages

ISC

无锡固电