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型号	下载订购	功能描述	制造商上传企业	LOGO
FCD4N60	文件：972.05 Kbytes Page：8 Pages	600V N-Channel MOSFET Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, pro 文件：972.05 Kbytes 页数：8 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FCD4N60	文件：352.64 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D 文件：352.64 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
FCD4N60TF	文件：972.05 Kbytes Page：8 Pages	600V N-Channel MOSFET Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, pro 文件：972.05 Kbytes 页数：8 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FCD4N60TM	文件：972.05 Kbytes Page：8 Pages	600V N-Channel MOSFET Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, pro 文件：972.05 Kbytes 页数：8 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FCD4N60TM	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti 文件：298.83 Kbytes 页数：14 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FCD5N60	文件：353.35 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 4.6A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.95Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC 文件：353.35 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
FCD5N60	文件：947.92 Kbytes Page：9 Pages	600V N-Channel MOSFET Description SuperFET™ is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provi 文件：947.92 Kbytes 页数：9 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FCD5N60TF	文件：947.92 Kbytes Page：9 Pages	600V N-Channel MOSFET Description SuperFET™ is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provi 文件：947.92 Kbytes 页数：9 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FCD5N60TM	文件：947.92 Kbytes Page：9 Pages	600V N-Channel MOSFET Description SuperFET™ is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provi 文件：947.92 Kbytes 页数：9 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FCD5N60TM	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti 文件：298.83 Kbytes 页数：14 Pages	FAIRCHILD 仙童半导体	FAIRCHILD

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晶体管资料

型号：
FCD1A
别名：
三极管、晶体管、晶体三极管
生产厂家：
制作材料：
Darl
性质：
射频/高频放大（HF）
封装形式：
极限工作电压：
15V
最大电流允许值：
0.02A
最大工作频率：
<1MHZ或未知
引脚数：
可代换的型号：
最大耗散功率：
2*0.2W
放大倍数：
图片代号：
NO
vtest：
15
htest：
999900
atest：
0.02
wtest：
2

技术参数

产品系统：
M8圆形连接器
类别：
线束
编码：
D编码
位数：
4位
电缆长度(M)：
L=2M
电流(最大)：
4A
电压(最大)：
60V
工作温度范围：
-40ºC~+105ºC
防水/防尘：
是
IP防护等级：
IP68

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市联世界科技有限公司	FCD830C	FAIRCHILD	24+/25+		50	原装正品现货库存价优	询价
芯有半导体（深圳）有限公司	FCD7N60TM	FAIRCHILD	14+		2500		询价
深圳市勤思达科技有限公司	FCD9N60N	FSC	12+	TO-252	15000	全新原装,绝对正品,公司现货供应。	询价
深圳市一线半导体有限公司	FCD880	NO	24+	DIP-8	127		询价
千层芯半导体(深圳)有限公司	FCDV19FF681JO3F	CDE	24+	原厂原装	1000	原装正品	询价
深圳市恒创达实业有限公司	FCD5N60TM	仙童	17+	NA	6200	100%原装正品现货	询价
深圳市鹏和科技有限公司	FCD900N60ZM	FSC	24+	TO-252	5000	全现原装公司现货	询价
深圳市卓越微芯电子有限公司	FCD7N60TM	FAIRCHIL	25+	TO-263	5000	百分百原装正品真实公司现货库存本公司只做原装可	询价
上海金庆电子技术有限公司	FCD09-MI-F1-472-12	EMISOLUTIONS	新		2	全新原装货期两周	询价
深圳市振宏微科技有限公司	FCD061200TP	wickmann	23+	NA	6486	专做原装正品,假一罚百!	询价

更多FCD供应商更新时间2026-1-17 14:30:00

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