首页 >FCD360N65S3R0>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
FCD360N65S3R0 | MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 10 A, 360 m Description SUPERFETIIIMOSFETisONSemiconductor’sbrand−newhigh voltagesuper-junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon−resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pro | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
FCD360N65S3R0 | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
MOSFET??Power,N-Channel,SUPERFETIII,EasyDrive650V,10A,360m Description SUPERFETIIIMOSFETisONSemiconductor’sbrand−newhigh voltagesuper-junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon-resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pro | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
MOSFET–Power,N-Channel,SUPERFETIII,EasyDrive650V,10A,360m Description SUPERFETIIIMOSFETisONSemiconductor’sbrand−newhigh voltagesuper−junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon−resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pro | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | ||
MOSFET–Power,N-Channel,SUPERFETIII,EasyDrive650V,10A,360m Description SUPERFETIIIMOSFETisONSemiconductor’sbrand−newhigh voltagesuper−junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon−resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pro | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
MOSFET??Power,N-Channel,SUPERFETIII,EasyDrive650V,10A,360m Description SUPERFETIIIMOSFETisONSemiconductor’sbrand−newhigh voltagesuper-junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon-resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pro | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi |
23+ |
D-PAK(TO-252) |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
ONSEMI |
NA |
50 |
全新原装!优势库存热卖中! |
询价 | |||
onsemi/安森美 |
22+ |
原装封装 |
20000 |
品质保证,信誉至上 |
询价 | ||
ON/安森美 |
22+ |
TO-252 |
7500 |
原装正品 |
询价 | ||
ON(安森美) |
23+ |
N/A |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
询价 | ||
ONN |
23+ |
N/A |
5000 |
原装原装原装哈 |
询价 | ||
ON/安森美 |
23+ |
TO252 |
7848 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
询价 | ||
ON/安森美 |
23+ |
TO252 |
12116 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 | ||
三年内 |
1983 |
纳立只做原装正品13590203865 |
询价 | ||||
ON/安森美 |
1922+ |
TO-252 |
6852 |
只做原装正品现货!或订货假一赔十! |
询价 |
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