首页 >FCP360N65S3R0>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
FCP360N65S3R0 | MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 10 A, 360 m Description SUPERFETIIIMOSFETisONSemiconductor’sbrand−newhigh voltagesuper-junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon-resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pro | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
FCP360N65S3R0 | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
MOSFET??Power,N-Channel,SUPERFETIII,EasyDrive650V,10A,360m Description SUPERFETIIIMOSFETisONSemiconductor’sbrand−newhigh voltagesuper-junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon−resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pro | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
MOSFET–Power,N-Channel,SUPERFETIII,EasyDrive650V,10A,360m Description SUPERFETIIIMOSFETisONSemiconductor’sbrand−newhigh voltagesuper−junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon−resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pro | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | ||
MOSFET–Power,N-Channel,SUPERFETIII,EasyDrive650V,10A,360m Description SUPERFETIIIMOSFETisONSemiconductor’sbrand−newhigh voltagesuper−junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon−resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pro | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
MOSFET??Power,N-Channel,SUPERFETIII,EasyDrive650V,10A,360m Description SUPERFETIIIMOSFETisONSemiconductor’sbrand−newhigh voltagesuper-junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon-resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pro | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
23+ |
20000 |
原装现货,可追溯原厂渠道 |
询价 | |||
onsemi(安森美) |
23+ |
TO-220 |
8357 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
三年内 |
1983 |
纳立只做原装正品13590203865 |
询价 | ||||
ON(安森美) |
2112+ |
TO-220-3 |
105000 |
800个/圆盘一级代理专营品牌!原装正品,优势现货,长 |
询价 | ||
ON |
21+ |
NA |
3000 |
进口原装 假一罚十 现货 |
询价 | ||
ON/安森美 |
21+ |
TO-220-3 |
8800 |
公司只做原装正品 |
询价 | ||
ON/安森美 |
22+ |
TO-220-3 |
263947 |
优势价格原装现货提供BOM一站式配单服务 |
询价 | ||
FAIRCHILD/仙童 |
21+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ON/安森美 |
2021+ |
TO-220-3 |
7600 |
原装现货，欢迎询价 |
询价 | ||
ON/安森美 |
23+ |
TO-220-3 |
30000 |
原装正品公司现货,假一赔十! |
询价 |
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