FCD360N65S3R0中文资料功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，10 A，360 mΩ，DPAK数据手册ONSEMI规格书

描述 Description

SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.

特性 Features

• 700 V @ TJ = 150 °C
• Higher system reliability at low temperature operation
• Ultra Low Gate Charge (Typ. Qg = 18 nC)
• Lower switching loss
• Low Effective Output Capacitance (Typ. Coss(eff.) = 173 pF)
• Lower switching loss
• Optimized Capacitance
• Lower peak Vds and lower Vgs oscillation
• Internal Gate Resistance: 1 Ω
• Typ. RDS(on) = 310 mΩ
• RoHS Compliant
• 100% Avalanche Tested

应用 Application

• Computing
• Consumer
• Industrial
• Notebook / Desktop computer / Game console
• Telecom / Server
• LCD / LED TV
• LED Lighting / Ballast
• Adapter