FCD260N65S3中文资料功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，12 A，260 mΩ，DPAK数据手册ONSEMI规格书

描述 Description

SuperFET® III MOSFET is ON Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This advanced technology
is tailored to minimize conduction loss, provide superior
switching performance, and withstand extreme dv/dt rate.
Consequently, SuperFET III MOSFET is very suitable for
various power system for miniaturization and higher efficiency.

特性 Features

• 700 V @ TJ = 150 °C
• Higher system reliability at low temperature operation
• Low Effective Output Capacitance (Typ. Coss(eff.) = 248 pF)
• Lower switching loss
• Ultra Low Gate Charge (Typ. Qg= 24 nC)
• Lower switching loss
• Optimized Capacitance
• Lower peak Vds and lower Vgs oscillation
• Internal Gate resistance: 8.7ohm
• Lower peak Vds and lower Vgs oscillation
• Typ. RDS(on) = 222 mΩ
• 100% Avalanche Tested
• RoHS CompliantRoHS Compliant
• Wave soldering guarantee

应用 Application

• Computing
• Consumer
• Industrial
• Notebook / Desktop computer / Game console
• LCD / LED TV
• Telecom / Server
• LED Lighting / Ballast
• Adapter