FCD260N65S3

功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，12 A，260 mΩ，DPAK; • 700 V @ TJ = 150 °C\n• Higher system reliability at low temperature operation\n• Low Effective Output Capacitance (Typ. Coss(eff.) = 248 pF)\n• Lower switching loss\n• Ultra Low Gate Charge (Typ. Qg= 24 nC)\n• Lower switching loss\n• Optimized Capacitance\n• Lower peak Vds and lower Vgs oscillation\n• Internal Gate resistance: 8.7ohm\n• Lower peak Vds and lower Vgs oscillation\n• Typ. RDS(on) = 222 mΩ\n• 100% Avalanche Tested\n• RoHS CompliantRoHS Compliant\n• Wave soldering guarantee\n;

SuperFET® III MOSFET is ON Semiconductor’s brand-new\nhigh voltage super-junction (SJ) MOSFET family that is utilizing\ncharge balance technology for outstanding low on-resistance\nand lower gate charge performance. This advanced technology\nis tailored to minimize conduction loss, provide superior\nswitching performance, and withstand extreme dv/dt rate.\nConsequently, SuperFET III MOSFET is very suitable for\nvarious power system for miniaturization and higher efficiency.

FCD260N65S3

丝印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

FCD260N65S3

丝印：FCD260N65S3；Package：D-PAK；MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive

FCP260N65S3

iscN-ChannelMOSFETTransistor

NVB260N65S3

MOSFET??Power,N-Channel,SUPERFETIII,Automotive,Easy-drive

NVB260N65S3

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.26Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NVD260N65S3

MOSFET??Power,N-Channel,SUPERFETIII,EasyDrive650V,260m,12A

Features •UltraLowGateCharge&LowEffectiveOutputCapacitance •LowerFOM(RDS(on)max.xQgtyp.&RDS(on)max.xEOSS) •100AvalancheTested •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant