丝印：FCD260N65S3；Package：D-PAK；MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive

文件：416.68 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

文件：309.72 Kbytes 页数：2 Pages

ISC

无锡固电

功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，12 A，260 mΩ，DPAK

SuperFET® III MOSFET is ON Semiconductor’s brand-new\nhigh voltage super-junction (SJ) MOSFET family that is utilizing\ncharge balance technology for outstanding low on-resistance\nand lower gate charge performance. This advanced technology\nis tailored to minimize conduction loss, provide superior\ • 700 V @ TJ = 150 °C\n• Higher system reliability at low temperature operation\n• Low Effective Output Capacitance (Typ. Coss(eff.) = 248 pF)\n• Lower switching loss\n• Ultra Low Gate Charge (Typ. Qg= 24 nC)\n• Lower switching loss\n• Optimized Capacitance\n• Lower peak Vds and lower Vgs oscillatio;

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

文件：303.51 Kbytes 页数：2 Pages

ISC

无锡固电

MOSFET ??Power, N-Channel, SUPERFET III, Automotive, Easy-drive

文件：333.3 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.26Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：344.91 Kbytes 页数：2 Pages

ISC

无锡固电