N-Channel SuperFET II MOSFET

Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide s

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Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 4A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.3Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

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ISC

无锡固电

功率 MOSFET，N 沟道，SUPERFET® II，800 V，4 A，1.3 Ω，DPAK

SuperFET® II MOSFET 是 Fairchild 利用电荷平衡技术实现出色的低导通电阻和更低栅极电荷性能的全新高压超级结（SJ）MOSFET 系列产品。 这项技术专用于最小化导通损耗并提供卓越的开关性能、dv/dt 额定值和更高雪崩能量。 此外，内部栅源极 ESD 二极管允许经受超过 2 kV HBM 冲击压力。因此，SuperFET II MOSFET 非常适合功率开关应用，如音频、笔记本适配器、照明、ATX 电源和工业电源应用。 •RDS(on)=1.05 Ω（典型值）\n•超低栅极电荷（典型值 Qg = 16.2 nC)\n•低 Eoss（典型值 1.57 uJ @ 400V)\n•低有效输出电容（典型值 Coss(eff.) = 48.7 pF)\n•100% 经过雪崩击穿测试\n•符合 RoHS 标准\n•改进了 ESD 防护能力;

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

• FEATURES • Drain-source on-resistance: RDS(on) ≤ 1.3Ω@10V • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • AC - DC Power Supply

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ISC

无锡固电