丝印：FCB125N65S3；Package：D2-PAK；MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 24 A, 125 m

Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide

文件：257.01 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

丝印：FCB125N65S3；Package：D2-PAK；MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 24 A, 125 m

Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide

文件：257.01 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 24A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 125mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：333.04 Kbytes 页数：2 Pages

ISC

无锡固电