丝印：FCH25N60N；Package：TO-247-3LD；MOSFET – N-Channel, SUPREMOS 600 V, 25 A, 126 m

Description The SUPREMOS® MOSFET is ON Semiconductor’s next generation of high voltage super−junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on−re

文件：406.07 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

丝印：FCH25N60N；Package：TO-247-3LD；MOSFET – N-Channel, SUPREMOS 600 V, 25 A, 126 m

Description The SUPREMOS® MOSFET is ON Semiconductor’s next generation of high voltage super−junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on−re

文件：406.07 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 25A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 126mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：371.86 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET

文件：570.33 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司