丝印：FCH125N65S3R0；Package：TO-247-3LD；MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive

文件：445.21 Kbytes 页数：10 Pages

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丝印：FCH125N65S3R0；Package：TO-247-3LD；MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive

文件：445.21 Kbytes 页数：10 Pages

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安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 24A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 125mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：372.52 Kbytes 页数：2 Pages

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无锡固电

MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive

文件：445.21 Kbytes 页数：10 Pages

ONSEMI

安森美半导体