零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
HEXFETPowerMOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFET짰PowerMOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
N-Channel100-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •175°CJunctionTemperature •LowThermalResistancePackage •100RgTested APPLICATIONS •IsolatedDC/DCConverters | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-Channel100-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •175°CJunctionTemperature •LowThermalResistancePackage •100RgTested APPLICATIONS •IsolatedDC/DCConverters | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
IscN-ChannelMOSFETTransistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HEXFETPowerMOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
UltraLowOn-Resistance Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
AdvancedProcessTechnology | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Dynamicdv/dtRating,FastSwitching,EaseofParalleling,SimpleDriveRequirements | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
N-ChannelPowerMOSFETsAvalancheEnergyRated
| HARRIS HARRIS corporation | HARRIS | ||
PowerMOSFET(Vdss=100V,Rds(on)=0.16ohm,Id=14A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •SurfaceMount •Availablein | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
详细参数
- 型号:
F530LR
- 制造商:
FOX
- 制造商全称:
FOX
- 功能描述:
HCMOS 5x3.2mm 3.3V SMD Oscillator
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FOX |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
INFINEON/英飞凌场效应管 |
24+23+ |
12580 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | |||
IR |
23+ |
SOT-263 |
28066 |
专业优势供应 |
询价 | ||
IR |
22+23+ |
TO-263 |
76286 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 | ||
IR |
1815+ |
TO-263 |
6528 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
VB |
2019 |
TO263 |
55000 |
绝对原装正品假一罚十! |
询价 | ||
IR |
2023+ |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | |||
IR |
2048+ |
TO263 |
9851 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
IR |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IR |
22+ |
TO-263 |
6000 |
终端可免费供样,支持BOM配单 |
询价 |
相关规格书
更多- F530LR 32.0000 MHZ
- F530LR 96.0000 MHZ
- F530LR-24.000MHZ
- F-531
- F53100006
- F531300
- F53150019
- F-532
- F5323
- F53252-000
- F53283-000
- F53286-000
- F-532-C
- F53310-000
- F53361-000
- F-53385
- F-534
- F53596-000
- F535L 6.0000 MHZ
- F535LAR
- F535LR
- F535LR 25.0000 MHZ
- F535LR 36.8640 MHZ
- F535LR 98.3040 MHZ
- F5-36
- F-5366X
- F536L
- F536LA
- F536LR
- F537
- F-53794
- F538 ZI
- F-538-C
- F-539
- F5396A
- F53N/R
- F-53X
- F5400-6N
- F54025004
- F54050004
- F54050016
- F54067-000
- F54075009
- F540L
- F54100016
相关库存
更多- F530LR 64.0000 MHZ
- F530LR/32/A/M/0
- F530LR-96.000MHZ
- F53100004
- F5311
- F53150009
- F-531-C
- F53200004
- F53250004
- F53279-000
- F53284-000
- F53288-000
- F-533
- F53327-000
- F53381-000
- F-533-C
- F-535
- F535L
- F535L-30.000 MHZ
- F535LAR
- F535LR
- F535LR 33.3330 MHZ
- F535LR 48.0000 MHZ
- F-536
- F53631-000
- F-536-C
- F536L 44.0000 MHZ
- F536LAR
- F-536-M
- F-537
- F-538
- F53858-000
- F-538-M
- F5396
- F5396B
- F53N/S
- F54.57A
- F54016-000
- F54025007
- F54050010
- F54050019
- F54075006
- F54075019
- F540LR
- F541300